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Samsung M3 78T2953EZ3-CF7 1GB
DSL Memory D4SH1G081SH26A-C 8GB

Samsung M3 78T2953EZ3-CF7 1GB vs DSL Memory D4SH1G081SH26A-C 8GB

总分
star star star star star
Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分
star star star star star
DSL Memory D4SH1G081SH26A-C 8GB

DSL Memory D4SH1G081SH26A-C 8GB

差异 规格 评论

差异

Samsung M3 78T2953EZ3-CF7 1GB 需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17
    测试中的平均数值
DSL Memory D4SH1G081SH26A-C 8GB 需要考虑的原因
DSL Memory D4SH1G081SH26A-C 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 58
    左右 -152% 更低的延时
  • 更快的写入速度，GB/s
    13.7 left arrow 1,950.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2953EZ3-CF7 1GB
DSL Memory D4SH1G081SH26A-C 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 23
  • 读取速度，GB/s
    4,241.0 left arrow 17.0
  • 写入速度，GB/s
    1,950.7 left arrow 13.7
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    651 left arrow 3011

Samsung M3 78T2953EZ3-CF7 1GB RAM的比较

Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB

DSL Memory D4SH1G081SH26A-C 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
DSL Memory D4SH1G081SH26A-C 8GB
DSL Memory D4SH1G081SH26A-C 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
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SK Hynix HMA451R7AFR8N-UH 4GB
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G Skill Intl F2-8500CL5-2GBPI 2GB
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G Skill Intl F4-2400C15-4GIS 4GB
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内存RAM
Samsung M393B1K70QB0-CK0 8GB
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A-DATA Technology AO1P21FC8T1-BSKS 8GB
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内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
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内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
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G Skill Intl F4-3400C16-8GTZ 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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内存RAM
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Crucial Technology CT51264BD1339.M16F 4GB
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Mushkin MR[A/B]4U360JNNM8G 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Mushkin 99[2/7/4]202F 4GB
Mushkin 99[2/7/4]202F 4GB
内存RAM
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内存RAM
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Kingston 9905701-018.A00G 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
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Kingston KHX3200C16D4/4GX 4GB
内存RAM