Samsung M3 78T2953EZ3-CF7 1GB vs Micron Technology AFSD416ES1P 16GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14.5

测试中的平均数值

Micron Technology AFSD416ES1P 16GB

需要考虑的原因
Micron Technology AFSD416ES1P 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 58

左右 -132% 更低的延时
更快的写入速度，GB/s

10.7 1,950.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

Micron Technology AFSD416ES1P 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 25
读取速度，GB/s

4,241.0 14.5
写入速度，GB/s

1,950.7 10.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

651 2620

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

Transcend Information TS1GSH64V4B 8GB

Transcend Information TS1GSH64V4B 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

G Skill Intl F4-3000C16-16GSXKB 16GB

G Skill Intl F4-3000C16-16GSXKB 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3733C17-8GTZA 8GB

G Skill Intl F4-3733C17-8GTZA 8GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Micron Technology 8ATF51264HZ-2G1A2 4GB

Micron Technology 8ATF51264HZ-2G1A2 4GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Micron Technology M471A1K43BB1-CRC 8GB

Micron Technology M471A1K43BB1-CRC 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Transcend Information TS1GSH64V4B 8GB

Transcend Information TS1GSH64V4B 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Corsair CM4X8GE2133C13K4 8GB

Corsair CM4X8GE2133C13K4 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMK32GX4M4D3000C16 8GB

Corsair CMK32GX4M4D3000C16 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Kingston KMKYF9-HYA 8GB

Kingston KMKYF9-HYA 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

G Skill Intl F4-3000C16-16GTRS 16GB

G Skill Intl F4-3000C16-16GTRS 16GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB