Samsung M3 78T3354BZ0-CCC 256MB vs G Skill Intl F4-2400C17-8GDBVR 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

G Skill Intl F4-2400C17-8GDBVR 8GB

G Skill Intl F4-2400C17-8GDBVR 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 18.3

测试中的平均数值

G Skill Intl F4-2400C17-8GDBVR 8GB

需要考虑的原因
G Skill Intl F4-2400C17-8GDBVR 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 46

左右 -109% 更低的延时
更快的写入速度，GB/s

12.5 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-2400C17-8GDBVR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 22
读取速度，GB/s

2,909.8 18.3
写入速度，GB/s

1,519.2 12.5
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 3122

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Samsung M3 78T3354BZ0-CCC 256MB

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G Skill Intl F4-2400C17-8GDBVR 8GB

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G Skill Intl F4-4133C19-8GTZSWF 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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A-DATA Technology AD73I1B1672EG 2GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB