Samsung M3 78T3354BZ0-CCC 256MB vs G Skill Intl F4-3200C14-8GVK 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

G Skill Intl F4-3200C14-8GVK 8GB

G Skill Intl F4-3200C14-8GVK 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 19.9

测试中的平均数值

G Skill Intl F4-3200C14-8GVK 8GB

需要考虑的原因
G Skill Intl F4-3200C14-8GVK 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 46

左右 -92% 更低的延时
更快的写入速度，GB/s

15.9 1,519.2

测试中的平均数值
更高的内存带宽，mbps

17000 3200

左右 5.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-3200C14-8GVK 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 24
读取速度，GB/s

2,909.8 19.9
写入速度，GB/s

1,519.2 15.9
内存带宽，mbps

3200 17000

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

241 3779

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

Crucial Technology BLS16G4S240FSD.16FAD 16GB

Crucial Technology BLS16G4S240FSD.16FAD 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Patriot Memory (PDP Systems) 3000 C18 Series 16GB

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Kingston 99U5429-007.A00LF 2GB

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G Skill Intl F4-4000C19-16GTZSW 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Corsair CMD64GX4M8B3200C16 8GB

Corsair CMD64GX4M8B3200C16 8GB