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Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Samsung M3 78T3354BZ0-CCC 256MB vs Micron Technology 8ATF1G64AZ-2G3H1R 8GB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15.3
    测试中的平均数值
Micron Technology 8ATF1G64AZ-2G3H1R 8GB 需要考虑的原因
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 46
    左右 -21% 更低的延时
  • 更快的写入速度，GB/s
    10.5 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 3200
    左右 6 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 38
  • 读取速度，GB/s
    2,909.8 left arrow 15.3
  • 写入速度，GB/s
    1,519.2 left arrow 10.5
  • 内存带宽，mbps
    3200 left arrow 19200
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    241 left arrow 2346

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
内存RAM
Kingston KHX1600C10D3/8GXF 8GB
Kingston KHX1600C10D3/8GXF 8GB
Corsair CMK16GX4M1A2666C16 16GB
Corsair CMK16GX4M1A2666C16 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston 99U5713-003.A00G 4GB
Kingston 99U5713-003.A00G 4GB
内存RAM
Corsair CMSX16GX4M1A2400C16 16GB
Corsair CMSX16GX4M1A2400C16 16GB
Corsair CMSX32GX4M2A2400C16 16GB
Corsair CMSX32GX4M2A2400C16 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology GD2.1827CS.003 8GB
Apacer Technology GD2.1827CS.003 8GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
King Tiger Technology Tigo-2400MHz-8G 8GB
King Tiger Technology Tigo-2400MHz-8G 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 9965662-004.A00G 16GB
Kingston 9965662-004.A00G 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CM4X8GD3000C16K4 8GB
Corsair CM4X8GD3000C16K4 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL16G32C16U4W.M8FB1 16GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Smart Modular SMU4WEC8C1K0464FCG 8GB
Smart Modular SMU4WEC8C1K0464FCG 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Micron Technology V-GeN D4V16GL24A8R 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Kingston 9965662-002.A01G 16GB
Kingston 9965662-002.A01G 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Corsair CMD16GX4M2B3200C14 8GB
Corsair CMD16GX4M2B3200C14 8GB
内存RAM