Samsung M3 78T3354BZ0-CCC 256MB vs SK Hynix HMA41GU6AFR8N-TF 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

SK Hynix HMA41GU6AFR8N-TF 8GB

SK Hynix HMA41GU6AFR8N-TF 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 15.3

测试中的平均数值

SK Hynix HMA41GU6AFR8N-TF 8GB

需要考虑的原因
SK Hynix HMA41GU6AFR8N-TF 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 46

左右 -28% 更低的延时
更快的写入速度，GB/s

11.1 1,519.2

测试中的平均数值
更高的内存带宽，mbps

17000 3200

左右 5.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

SK Hynix HMA41GU6AFR8N-TF 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 36
读取速度，GB/s

2,909.8 15.3
写入速度，GB/s

1,519.2 11.1
内存带宽，mbps

3200 17000

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

241 2696

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

SK Hynix HMA41GU6AFR8N-TF 8GB

SK Hynix HMA41GU6AFR8N-TF 8GB

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

Team Group Inc. TEAMGROUP-UD4-3866 8GB

Team Group Inc. TEAMGROUP-UD4-3866 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

AMD R748G2606U2S 8GB

AMD R748G2606U2S 8GB

SK Hynix HMT351S6BFR8C-H9 4GB

SK Hynix HMT351S6BFR8C-H9 4GB

Corsair CMK256GX4M8A2400C16 32GB

Corsair CMK256GX4M8A2400C16 32GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

G Skill Intl F4-2800C17-8GIS 8GB

G Skill Intl F4-2800C17-8GIS 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Kingston 9905713-004.A00G 4GB

Kingston 9905713-004.A00G 4GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

G Skill Intl F4-2800C15-8GRK 8GB

G Skill Intl F4-2800C15-8GRK 8GB

Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

Ramaxel Technology RMSA3320KE78HAF-3200 8GB

Ramaxel Technology RMSA3320KE78HAF-3200 8GB

Kingston ACR16D3LS1NGG/4G 4GB

Kingston ACR16D3LS1NGG/4G 4GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

G Skill Intl F4-2666C19-8GVR 8GB

G Skill Intl F4-2666C19-8GVR 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

InnoDisk Corporation M4S0-8GSSOCIK 8GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMK8GX4M2A2666C16 4GB

Corsair CMK8GX4M2A2666C16 4GB

Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

Essencore Limited KD4AGU880-32A160X 16GB

Essencore Limited KD4AGU880-32A160X 16GB

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

Patriot Memory (PDP Systems) PSD416G21332S 16GB

Patriot Memory (PDP Systems) PSD416G21332S 16GB