Samsung M3 78T5663RZ3-CF7 2GB vs A-DATA Technology AM2P32NC8W1-BCFS 8GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

A-DATA Technology AM2P32NC8W1-BCFS 8GB

A-DATA Technology AM2P32NC8W1-BCFS 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 16.9

测试中的平均数值

A-DATA Technology AM2P32NC8W1-BCFS 8GB

需要考虑的原因
A-DATA Technology AM2P32NC8W1-BCFS 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 65

左右 -86% 更低的延时
更快的写入速度，GB/s

9.6 2,784.6

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

A-DATA Technology AM2P32NC8W1-BCFS 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 35
读取速度，GB/s

4,806.8 16.9
写入速度，GB/s

2,784.6 9.6
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

932 2607

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology DDR3 1600 4GB

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Corsair CM4X8GD3200C16K4 8GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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SanMax Technologies Inc. SMD-8G28HP-21P 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Corsair CM4X16GC3200C16K2E 16GB

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Corsair CMK32GX5M2B5200C40 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

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Kingston 9905403-011.A03LF 2GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Wilk Elektronik S.A. GR3200S464L22S/8G 8GB

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SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Crucial Technology CT16G4DFS8266.C8FB 16GB

Crucial Technology CT16G4DFS8266.C8FB 16GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

G Skill Intl F4-4800C20-16GTZR 16GB

G Skill Intl F4-4800C20-16GTZR 16GB

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

Apacer Technology GD2.1542WS.003 8GB

Apacer Technology GD2.1542WS.003 8GB