Samsung M3 78T5663RZ3-CF7 2GB vs Crucial Technology BLS4G4D26BFSE.8FB 4GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Crucial Technology BLS4G4D26BFSE.8FB 4GB

Crucial Technology BLS4G4D26BFSE.8FB 4GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 15.7

测试中的平均数值
更快的写入速度，GB/s

2,784.6 12.4

测试中的平均数值

Crucial Technology BLS4G4D26BFSE.8FB 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSE.8FB 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 65

左右 -195% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Crucial Technology BLS4G4D26BFSE.8FB 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 22
读取速度，GB/s

4,806.8 15.7
写入速度，GB/s

2,784.6 12.4
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

932 3174

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS8G4D26BFSTK.8FD 8GB

Crucial Technology BLS8G4D26BFSTK.8FD 8GB

Kingston 99P5471-016.A00LF 8GB

Kingston 99P5471-016.A00LF 8GB

Crucial Technology BL8G32C16S4B.8FE 8GB

Crucial Technology BL8G32C16S4B.8FE 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

A-DATA Technology AO2P24HC8T1-BTBS 8GB

A-DATA Technology AO2P24HC8T1-BTBS 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Essencore Limited KD48GS88C-32N2200 8GB

Essencore Limited KD48GS88C-32N2200 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Crucial Technology BLS4G4D26BFSE.8FB 4GB

Crucial Technology BLS4G4D26BFSE.8FB 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-4266C17-16GTZRB 16GB

G Skill Intl F4-4266C17-16GTZRB 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

G Skill Intl F4-3200C16-16GTZN 16GB

G Skill Intl F4-3200C16-16GTZN 16GB

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

Corsair CMK8GX4M2B4200C19 4GB

Corsair CMK8GX4M2B4200C19 4GB

Patriot Memory (PDP Systems) PSD22G6672 2GB

Patriot Memory (PDP Systems) PSD22G6672 2GB

Crucial Technology CT8G4DFS824A.C8FDD1 8GB

Crucial Technology CT8G4DFS824A.C8FDD1 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Kingston 9905678-041.A00G 4GB

Kingston 9905678-041.A00G 4GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Crucial Technology BLT8G4D26AFTA.16FBD 8GB

Crucial Technology BLT8G4D26AFTA.16FBD 8GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Kingston 9965600-023.A00G 16GB

Kingston 9965600-023.A00G 16GB