Samsung M3 78T5663RZ3-CF7 2GB vs Crucial Technology CT16G4DFD8266.M16FH 16GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Crucial Technology CT16G4DFD8266.M16FH 16GB

Crucial Technology CT16G4DFD8266.M16FH 16GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 17

测试中的平均数值
更快的写入速度，GB/s

2,784.6 13.7

测试中的平均数值

Crucial Technology CT16G4DFD8266.M16FH 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8266.M16FH 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 65

左右 -171% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Crucial Technology CT16G4DFD8266.M16FH 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 24
读取速度，GB/s

4,806.8 17.0
写入速度，GB/s

2,784.6 13.7
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

932 3230

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Samsung 1600 CL10 Series 8GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Golden Empire CL16-18-18 D4-3000 16GB

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G Skill Intl F3-2400C11-8GSR 8GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Apacer Technology 78.C1GMM.BAC0B 8GB

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Peak Electronics 256X64M-67E 2GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Gloway International Co. Ltd. TYA4U2400D17081C 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Kingston 9905701-011.A00G 16GB

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Kingston 9965525-140.A00LF 8GB

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A-DATA Technology DDR4 3600 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Kingston 9965662-013.A01G 16GB

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Samsung M471B5273CH0-CH9 4GB

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INTENSO 5641162 8GB

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