Samsung M3 78T5663RZ3-CF7 2GB vs G Skill Intl F4-2133C15-4GNT 4GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

G Skill Intl F4-2133C15-4GNT 4GB

G Skill Intl F4-2133C15-4GNT 4GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 13.3

测试中的平均数值

G Skill Intl F4-2133C15-4GNT 4GB

需要考虑的原因
G Skill Intl F4-2133C15-4GNT 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 65

左右 -81% 更低的延时
更快的写入速度，GB/s

9.8 2,784.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

G Skill Intl F4-2133C15-4GNT 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 36
读取速度，GB/s

4,806.8 13.3
写入速度，GB/s

2,784.6 9.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

932 2358

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

G Skill Intl F4-2133C15-4GNT 4GB

G Skill Intl F4-2133C15-4GNT 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Corsair CMK32GX4M4D3600C18 8GB

Corsair CMK32GX4M4D3600C18 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

SK Hynix HMA84GR7MFR4N-TF 32GB

SK Hynix HMA84GR7MFR4N-TF 32GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Ramaxel Technology RMSA3230KB78HAF2133 8GB

Ramaxel Technology RMSA3230KB78HAF2133 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Apacer Technology 78.CAGMT.40C0B 8GB

Apacer Technology 78.CAGMT.40C0B 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

G Skill Intl F4-3000C15-8GVKB 8GB

G Skill Intl F4-3000C15-8GVKB 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Corsair CM4X8GD3000C16K4D 8GB

Corsair CM4X8GD3000C16K4D 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Apacer Technology 78.C1GQB.4032B 8GB

Apacer Technology 78.C1GQB.4032B 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Crucial Technology BLS8G4D26BFSE.16FD2 8GB

Crucial Technology BLS8G4D26BFSE.16FD2 8GB

AENEON AET760UD00-370B97X 1GB

AENEON AET760UD00-370B97X 1GB

Shenzhen Technology Co Ltd 8GB

Shenzhen Technology Co Ltd 8GB

G Skill Intl F3-1600C11-4GIS 4GB

G Skill Intl F3-1600C11-4GIS 4GB

Mushkin MR[ABC]4U360JNNM8G 8GB

Mushkin MR[ABC]4U360JNNM8G 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology CT8G4SFS8266.M8FE 8GB

Crucial Technology CT8G4SFS8266.M8FE 8GB