Samsung M3 78T5663RZ3-CF7 2GB vs Nanya Technology NT8GA64D88CX3S-JR 8GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Nanya Technology NT8GA64D88CX3S-JR 8GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 14.2

测试中的平均数值

Nanya Technology NT8GA64D88CX3S-JR 8GB

需要考虑的原因
Nanya Technology NT8GA64D88CX3S-JR 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 65

左右 -71% 更低的延时
更快的写入速度，GB/s

9.8 2,784.6

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 38
读取速度，GB/s

4,806.8 14.2
写入速度，GB/s

2,784.6 9.8
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

932 2451

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Crucial Technology BLT4G4D30AETA.K8FD 4GB

Crucial Technology BLT4G4D30AETA.K8FD 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Micron Technology TEAMGROUP-UD4-3000 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

Kingston HP669238-071-HYC 4GB

Kingston HP669238-071-HYC 4GB

G Skill Intl F4-3200C16-32GVK 32GB

G Skill Intl F4-3200C16-32GVK 32GB

Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

G Skill Intl F4-3200C15-4GRKD 4GB

G Skill Intl F4-3200C15-4GRKD 4GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

G Skill Intl F4-2666C19-8GVK 8GB

G Skill Intl F4-2666C19-8GVK 8GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

G Skill Intl F4-3600C17-4GTZ 4GB

G Skill Intl F4-3600C17-4GTZ 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Patriot Memory (PDP Systems) PSD44G213382 4GB

Patriot Memory (PDP Systems) PSD44G213382 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB

ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Ramaxel Technology RMSA3270ME86H9F-2666 4GB

Ramaxel Technology RMSA3270ME86H9F-2666 4GB

G Skill Intl F3-1600C11-8GIS 8GB

G Skill Intl F3-1600C11-8GIS 8GB

Kingston KHX4800C19D4/8GX 8GB

Kingston KHX4800C19D4/8GX 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Corsair CMD16GX4M4B3200C16 4GB

Corsair CMD16GX4M4B3200C16 4GB