Samsung M3 78T5663RZ3-CF7 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 17.7

测试中的平均数值
更快的写入速度，GB/s

2,784.6 12.7

测试中的平均数值

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 65

左右 -195% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 22
读取速度，GB/s

4,806.8 17.7
写入速度，GB/s

2,784.6 12.7
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

932 3075

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Essencore Limited KD48GS481-26N1600 8GB

Essencore Limited KD48GS481-26N1600 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

G Skill Intl F4-3333C16-4GRRD 4GB

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Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

G Skill Intl F4-2800C15-16GRKD 16GB

G Skill Intl F4-2800C15-16GRKD 16GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Kingston K6VDX7-HYD 8GB

Kingston K6VDX7-HYD 8GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Patriot Memory (PDP Systems) PSD48G21332S 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Crucial Technology CT16G4SFS832A.M8FE 16GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

G Skill Intl F4-3000C16-8GTZR 8GB

G Skill Intl F4-3000C16-8GTZR 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Maxsun MSD48G30Q3 8GB

Maxsun MSD48G30Q3 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

G Skill Intl F4-3600C16-8GTZR 8GB

G Skill Intl F4-3600C16-8GTZR 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Kingston KHX2400C14S4/4G 4GB

Kingston KHX2400C14S4/4G 4GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Corsair CM4X8GE2400C15K4 8GB

Corsair CM4X8GE2400C15K4 8GB