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Samsung M3 78T5663RZ3-CF7 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
比较
Samsung M3 78T5663RZ3-CF7 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
总分
Samsung M3 78T5663RZ3-CF7 2GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB
报告一个错误
更快的读取速度,GB/s
4
17.7
测试中的平均数值
更快的写入速度,GB/s
2,784.6
12.7
测试中的平均数值
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
报告一个错误
低于PassMark测试中的延时,ns
22
65
左右 -195% 更低的延时
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T5663RZ3-CF7 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
22
读取速度,GB/s
4,806.8
17.7
写入速度,GB/s
2,784.6
12.7
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
932
3075
Samsung M3 78T5663RZ3-CF7 2GB RAM的比较
Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM的比较
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Ramaxel Technology RMT3170EB68F9W1600 4GB
Essencore Limited KD48GS481-26N1600 8GB
Samsung M3 78T5663RZ3-CF7 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
G Skill Intl F4-3333C16-4GRRD 4GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-2800C15-16GRKD 16GB
SK Hynix HMT325S6CFR8C-H9 2GB
Kingston K6VDX7-HYD 8GB
Kingston 9905458-017.A01LF 4GB
Patriot Memory (PDP Systems) PSD48G21332S 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT16G4SFS832A.M8FE 16GB
Kingston KVR533D2N4 512MB
G Skill Intl F4-3000C16-8GTZR 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Patriot Memory (PDP Systems) 2666 C16 Series 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Maxsun MSD48G30Q3 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-3600C16-8GTZR 8GB
A-DATA Technology DQKD1A08 1GB
Kingston KHX2400C14S4/4G 4GB
Kingston 9905403-090.A01LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N
Samsung M393B5170FH0-CK0 4GB
Corsair CM4X8GE2400C15K4 8GB
报告一个错误
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Bug description
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