Samsung M3 78T5663RZ3-CF7 2GB vs Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

低于PassMark测试中的延时，ns

65 86

左右 24% 更低的延时
更快的读取速度，GB/s

4 14.3

测试中的平均数值

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

需要考虑的原因
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

报告一个错误

更快的写入速度，GB/s

8.1 2,784.6

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 86
读取速度，GB/s

4,806.8 14.3
写入速度，GB/s

2,784.6 8.1
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

932 1658

RAM Latency Calculator

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最新比较

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Samsung M3 78T5663RZ3-CF7 2GB

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Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

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Kingston KHX2133C11D3/4GX 4GB

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Peak Electronics 256X64M-67E 2GB

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Patriot Memory (PDP Systems) 3600 C16 Series 8GB

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ASint Technology SSA302G08-EGN1C 4GB

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Crucial Technology CT4G4DFS8213.C8FBD2 4GB

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G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F4-3733C17-16GTZR 16GB

G Skill Intl F4-3733C17-16GTZR 16GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

G Skill Intl F4-3200C22-16GRS 16GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

V-Color Technology Inc. TA48G30S815G 8GB

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Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB