Samsung M3 93T5750CZA-CE6 2GB vs Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 18.6

测试中的平均数值
更快的写入速度，GB/s

2,622.0 14.0

测试中的平均数值

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 77

左右 -267% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 21
读取速度，GB/s

3,405.2 18.6
写入速度，GB/s

2,622.0 14.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 3356

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Mushkin 991586 2GB

Mushkin 991586 2GB

Samsung M474A2K43BB1-CRC 16GB

Samsung M474A2K43BB1-CRC 16GB

G Skill Intl F4-3866C18-16GTZR 16GB

G Skill Intl F4-3866C18-16GTZR 16GB

G Skill Intl F4-3600C14-16GTRG 16GB

G Skill Intl F4-3600C14-16GTRG 16GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Corsair CMD64GX4M8X3800C19 8GB

Corsair CMD64GX4M8X3800C19 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Hypertec G2RT-4AFT00 16GB

Hypertec G2RT-4AFT00 16GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

A-DATA Technology AO2P24HCST2-BW8S 16GB

A-DATA Technology AO2P24HCST2-BW8S 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3733C17-16GTZR 16GB

G Skill Intl F4-3733C17-16GTZR 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Apacer Technology 78.BAGMD.AF20B 4GB

Apacer Technology 78.BAGMD.AF20B 4GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-2400C17-4GIS 4GB

G Skill Intl F4-2400C17-4GIS 4GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Kingmax Semiconductor GLLG42F-DA---------- 8GB

Kingmax Semiconductor GLLG42F-DA---------- 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Patriot Memory (PDP Systems) PSD44G240082 4GB

Patriot Memory (PDP Systems) PSD44G240082 4GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

G Skill Intl F4-2133C15-8GRK 8GB

G Skill Intl F4-2133C15-8GRK 8GB

Kingston KHX1600C9D3/4GX 4GB

Kingston KHX1600C9D3/4GX 4GB

Samsung M378A5244CB0-CRC 4GB

Samsung M378A5244CB0-CRC 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Patriot Memory (PDP Systems) PSD48G26662 8GB

Patriot Memory (PDP Systems) PSD48G26662 8GB