Samsung M323R2GA3BB0-CQKOD 16GB vs Crucial Technology CT16G4DFD8213.16FDD1 16GB

总分

Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

总分

Crucial Technology CT16G4DFD8213.16FDD1 16GB

Crucial Technology CT16G4DFD8213.16FDD1 16GB

差异规格评论

差异

Samsung M323R2GA3BB0-CQKOD 16GB

需要考虑的原因
Samsung M323R2GA3BB0-CQKOD 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 76

左右 67% 更低的延时
更快的写入速度，GB/s

12.1 6.4

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Crucial Technology CT16G4DFD8213.16FDD1 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.16FDD1 16GB

报告一个错误

更快的读取速度，GB/s

13.6 13.4

测试中的平均数值

规格

完整的技术规格清单

Samsung M323R2GA3BB0-CQKOD 16GB

Crucial Technology CT16G4DFD8213.16FDD1 16GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

25 76
读取速度，GB/s

13.4 13.6
写入速度，GB/s

12.1 6.4
内存带宽，mbps

19200 17000

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

no data / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3419 1624

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9965525-018.A00LF 4GB

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Gloway International (HK) STKD4GAM2133-F 8GB

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G Skill Intl F4-2666C15-8GRR 8GB

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A-DATA Technology DQKD1A08 1GB

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G Skill Intl F4-3000C16-8GTRG 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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