Samsung M378A1K43EB2-CWE 8GB vs Corsair CMK16GX4M2F4400C19 8GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分

Corsair CMK16GX4M2F4400C19 8GB

Corsair CMK16GX4M2F4400C19 8GB

差异规格评论

差异

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Corsair CMK16GX4M2F4400C19 8GB

需要考虑的原因
Corsair CMK16GX4M2F4400C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

16 33

左右 -106% 更低的延时
更快的读取速度，GB/s

21.7 17.6

测试中的平均数值
更快的写入速度，GB/s

17.8 12.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M378A1K43EB2-CWE 8GB

Corsair CMK16GX4M2F4400C19 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 16
读取速度，GB/s

17.6 21.7
写入速度，GB/s

12.0 17.8
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2910 3872

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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takeMS International AG TMS2GB264D082-805G 2GB

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Kingston ACR256X64D3S1333C9 2GB

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Super Talent F24EA8GS 8GB

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Crucial Technology CT32G4DFD8266.C16FE 32GB

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SK Hynix HYMP512S64CP8-Y5 1GB

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Kingston K531R8-MIN 4GB

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Corsair CMK16GX4M2L3200C16 8GB

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Kingston KHX318C10FR/8G 8GB

Corsair CMK64GX4M8X4133C19 8GB

Corsair CMK64GX4M8X4133C19 8GB