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Samsung M378B1G73AH0-CH9 8GB
Crucial Technology CT51264BA1339.C16F 4GB

Samsung M378B1G73AH0-CH9 8GB vs Crucial Technology CT51264BA1339.C16F 4GB

总分
star star star star star
Samsung M378B1G73AH0-CH9 8GB

Samsung M378B1G73AH0-CH9 8GB

总分
star star star star star
Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

差异 规格 评论

差异

Samsung M378B1G73AH0-CH9 8GB 需要考虑的原因
Samsung M378B1G73AH0-CH9 8GB
报告一个错误
Crucial Technology CT51264BA1339.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 73
    左右 -170% 更低的延时
  • 更快的读取速度，GB/s
    13.9 left arrow 6.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 3.2
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378B1G73AH0-CH9 8GB
Crucial Technology CT51264BA1339.C16F 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    73 left arrow 27
  • 读取速度，GB/s
    6.1 left arrow 13.9
  • 写入速度，GB/s
    3.2 left arrow 8.4
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1004 left arrow 2251

Samsung M378B1G73AH0-CH9 8GB RAM的比较

Kingston KHX1866C10D3/8GX 8GB
SK Hynix HMT325U6CFR8C-H9 2GB

Crucial Technology CT51264BA1339.C16F 4GB RAM的比较

Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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