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Samsung M378B5173BH0-CH9 4GB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB

Samsung M378B5173BH0-CH9 4GB vs Crucial Technology BLE8G4D26AFEA.16FBD 8GB

总分
star star star star star
Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分
star star star star star
Crucial Technology BLE8G4D26AFEA.16FBD 8GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

差异 规格 评论

差异

Samsung M378B5173BH0-CH9 4GB 需要考虑的原因
Samsung M378B5173BH0-CH9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 33
    左右 30% 更低的延时
Crucial Technology BLE8G4D26AFEA.16FBD 8GB 需要考虑的原因
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.6 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.3 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M378B5173BH0-CH9 4GB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 33
  • 读取速度，GB/s
    13.4 left arrow 16.6
  • 写入速度，GB/s
    8.0 left arrow 13.3
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2269 left arrow 3141

Samsung M378B5173BH0-CH9 4GB RAM的比较

Kingston HX318C10FK/4 4GB
Apacer Technology D12.2755BS.001 16GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Corsair CM4X16GE2666C16K4 16GB
Corsair CM4X16GE2666C16K4 16GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
Corsair CMK16GX4M4C3000C16 4GB
Corsair CMK16GX4M4C3000C16 4GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Corsair CM4B4G1J2400A14K 4GB
Corsair CM4B4G1J2400A14K 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
AMD R948G2806U2S 8GB
AMD R948G2806U2S 8GB
内存RAM
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
SK Hynix HMA81GS6CJR8N-UH 8GB
SK Hynix HMA81GS6CJR8N-UH 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-4133C19-8GTZKW 8GB
G Skill Intl F4-4133C19-8GTZKW 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston KHX2933C17D4/16G 16GB
Kingston KHX2933C17D4/16G 16GB
内存RAM
Kingston ACR16D3LS1KNG/8G 8GB
Kingston ACR16D3LS1KNG/8G 8GB
Gloway International (HK) STK4U2400D17081C 8GB
Gloway International (HK) STK4U2400D17081C 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
内存RAM