Samsung M378B5173BH0-CH9 4GB vs Crucial Technology CT8G4SFS824A.M8FD 8GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Crucial Technology CT8G4SFS824A.M8FD 8GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 36

左右 36% 更低的延时

Crucial Technology CT8G4SFS824A.M8FD 8GB

需要考虑的原因
Crucial Technology CT8G4SFS824A.M8FD 8GB

报告一个错误

更快的读取速度，GB/s

14.9 13.4

测试中的平均数值
更快的写入速度，GB/s

9.8 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 36
读取速度，GB/s

13.4 14.9
写入速度，GB/s

8.0 9.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2269 2415

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-2400C17-16GIS 16GB

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Corsair CMK16GX4M2B3000C15 8GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Corsair CMD64GX4M8A2400C14 8GB

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Samsung M3 78T2863QZS-CF7 1GB

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Kingston KHX2400C11D3/4GX 4GB

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Swissbit MEU25664D6BC2EP-30 2GB

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Kingston 9965604-016.C01G 8GB

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Kingston 99U5584-010.A00LF 4GB

Kingston 99U5584-010.A00LF 4GB

SK Hynix HMA81GU6CJR8N-VK 8GB

SK Hynix HMA81GU6CJR8N-VK 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Golden Empire CL19-25-25 D4-4000 4GB

Golden Empire CL19-25-25 D4-4000 4GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston 8ATF1G64AZ-2G1B1 8GB

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Mushkin 991586 2GB

Mushkin 991586 2GB

Corsair CMH16GX4M2Z3200C16 8GB

Corsair CMH16GX4M2Z3200C16 8GB