Samsung M378B5673EH1-CF8 2GB vs Corsair CM4X16GE2666Z16K4 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Corsair CM4X16GE2666Z16K4 16GB

Corsair CM4X16GE2666Z16K4 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 39

左右 28% 更低的延时

Corsair CM4X16GE2666Z16K4 16GB

需要考虑的原因
Corsair CM4X16GE2666Z16K4 16GB

报告一个错误

更快的读取速度，GB/s

14.8 12.7

测试中的平均数值
更快的写入速度，GB/s

13.1 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Corsair CM4X16GE2666Z16K4 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 39
读取速度，GB/s

12.7 14.8
写入速度，GB/s

7.5 13.1
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1988 3017

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AO2P32NCST2-BZ7SHD 16GB

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Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB

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G Skill Intl F3-1333C9-4GIS 4GB

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Apacer Technology 78.DAGNN.4030B 16GB

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Golden Empire CL5-5-5DDR2 1GB

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A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Crucial Technology BL16G32C16S4B.M16FE 16GB

Crucial Technology BL16G32C16S4B.M16FE 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Apacer Technology 78.CAGR4.40C0B 8GB

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Corsair CML16GX3M2A1600C10 8GB

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takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology BLS4G4D240FSA.M8F 4GB

Crucial Technology BLS4G4D240FSA.M8F 4GB