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Samsung M378B5673EH1-CF8 2GB
Corsair CMD64GX4M4C3200C16 16GB

Samsung M378B5673EH1-CF8 2GB vs Corsair CMD64GX4M4C3200C16 16GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
Corsair CMD64GX4M4C3200C16 16GB

Corsair CMD64GX4M4C3200C16 16GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 35
    左右 20% 更低的延时
Corsair CMD64GX4M4C3200C16 16GB 需要考虑的原因
Corsair CMD64GX4M4C3200C16 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.5 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Corsair CMD64GX4M4C3200C16 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 35
  • 读取速度，GB/s
    12.7 left arrow 15.5
  • 写入速度，GB/s
    7.5 left arrow 13.2
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 3183

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Corsair CMD64GX4M4C3200C16 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M378B5673EH1-CF8 2GB
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Corsair CMD64GX4M4C3200C16 16GB
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Crucial Technology CT32G4DFD832A.C16FE 32GB
内存RAM
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内存RAM
Samsung M471A4G43AB1-CWE 32GB
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内存RAM
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内存RAM
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内存RAM
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Essencore Limited IM48GU48N24-FFFHM 8GB
内存RAM
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Nanya Technology NT2GT64U8HD0BN-AD 2GB
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G Skill Intl F4-3600C14-16GTRS 16GB
内存RAM
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AMD R538G1601U2S 8GB
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内存RAM
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Samsung M3 78T5663RZ3-CE6 2GB
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Kingston KHX2933C17D4/8G 8GB
内存RAM
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SK Hynix HMT351S6BFR8C-H9 4GB
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