Samsung M378B5673EH1-CF8 2GB vs Corsair CMV16GX4M1A2133C15 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Corsair CMV16GX4M1A2133C15 16GB

Corsair CMV16GX4M1A2133C15 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 32

左右 13% 更低的延时

Corsair CMV16GX4M1A2133C15 16GB

需要考虑的原因
Corsair CMV16GX4M1A2133C15 16GB

报告一个错误

更快的读取速度，GB/s

15.2 12.7

测试中的平均数值
更快的写入速度，GB/s

10.7 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Corsair CMV16GX4M1A2133C15 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 32
读取速度，GB/s

12.7 15.2
写入速度，GB/s

7.5 10.7
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1988 2918

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR512X64D3S13C9G 4GB

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Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

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Crucial Technology BLS4G4D26BFSC.8FD2 4GB

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Kingston 9965525-018.A00LF 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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InnoDisk Corporation M4C0-AGS1TCSJ 16GB

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Samsung M393B1G70BH0-CK0 8GB

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Corsair CMSX32GX4M2A2400C16 16GB

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Mushkin MB[A/B]4U240FFFF16G 16GB

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Samsung M471B5173EB0-YK0 4GB

Crucial Technology CT16G4DFD824A.M16FE 16GB

Crucial Technology CT16G4DFD824A.M16FE 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

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Gloway International Co. Ltd. TYA4U2666D19321C 32GB