Samsung M378B5673EH1-CF8 2GB vs Crucial Technology BLS16G4D32AESE.M16FE 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Crucial Technology BLS16G4D32AESE.M16FE 16GB

Crucial Technology BLS16G4D32AESE.M16FE 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

Crucial Technology BLS16G4D32AESE.M16FE 16GB

需要考虑的原因
Crucial Technology BLS16G4D32AESE.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 28

左右 -8% 更低的延时
更快的读取速度，GB/s

18.9 12.7

测试中的平均数值
更快的写入速度，GB/s

16.2 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Crucial Technology BLS16G4D32AESE.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 26
读取速度，GB/s

12.7 18.9
写入速度，GB/s

7.5 16.2
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 3857

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Corsair CMK8GX4M1D2666C16 8GB

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Corsair CMD8GX4M2B3000C15 4GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Kingston XG9XKG-MIE 16GB

Kingston XG9XKG-MIE 16GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

Samsung M4 70T5663CZ3-CE6 2GB

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SK Hynix HMA851S6AFR6N-UH 4GB

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AMD R748G2400U2S 8GB

AMD R748G2400U2S 8GB

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