Samsung M378B5673EH1-CF8 2GB vs Crucial Technology CT204864BF160B.C16 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Crucial Technology CT204864BF160B.C16 16GB

Crucial Technology CT204864BF160B.C16 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 35

左右 20% 更低的延时
更快的读取速度，GB/s

12.7 9.8

测试中的平均数值
更快的写入速度，GB/s

7.5 7.2

测试中的平均数值

Crucial Technology CT204864BF160B.C16 16GB

需要考虑的原因
Crucial Technology CT204864BF160B.C16 16GB

报告一个错误

更高的内存带宽，mbps

12800 8500

左右 1.51 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Crucial Technology CT204864BF160B.C16 16GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

28 35
读取速度，GB/s

12.7 9.8
写入速度，GB/s

7.5 7.2
内存带宽，mbps

8500 12800

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1066 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1988 1811

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMA851S6CJR6N-UH 4GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Corsair CMK64GX4M4D3000C16 16GB

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Corsair CM3X8GA2400C11Y2R 8GB

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Smart Modular SMU4TDC3C0K0464SCG 4GB

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Kingston KHX2400C15/16G 16GB

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Corsair CMH16GX4M2Z3600C18 8GB

Corsair CMH16GX4M2Z3600C18 8GB

Corsair CMY8GX3M2A2666C10 4GB

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Mushkin 99[2/7/4]205F 8GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Samsung M393A1G43DB1-CRC 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

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Kingston XJV223-MIE-NX 16GB

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Micron Technology 16ATF2G64HZ-2G3E1 16GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB