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Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3000C16-16GTZR 16GB
比较
Samsung M378B5673EH1-CF8 2GB vs G Skill Intl F4-3000C16-16GTZR 16GB
总分
Samsung M378B5673EH1-CF8 2GB
总分
G Skill Intl F4-3000C16-16GTZR 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
低于PassMark测试中的延时,ns
28
29
左右 3% 更低的延时
需要考虑的原因
G Skill Intl F4-3000C16-16GTZR 16GB
报告一个错误
更快的读取速度,GB/s
17.6
12.7
测试中的平均数值
更快的写入速度,GB/s
14.2
7.5
测试中的平均数值
更高的内存带宽,mbps
17000
8500
左右 2 更高的带宽
规格
完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3000C16-16GTZR 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
29
读取速度,GB/s
12.7
17.6
写入速度,GB/s
7.5
14.2
内存带宽,mbps
8500
17000
Other
描述
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1066 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1988
3573
Samsung M378B5673EH1-CF8 2GB RAM的比较
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB
G Skill Intl F4-3000C16-16GTZR 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3000C16-16GTZR 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3600C16-16GTRS 16GB
Kingston KHX2400C11D3/4GX 4GB
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
A-DATA Technology DOVF1B163G2G 2GB
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
G Skill Intl F4-4000C18-32GTZN 32GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Corsair CMK64GX4M2Z4000C18 32GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-2666C15-16GVR 16GB
A-DATA Technology DQVE1908 512MB
Crucial Technology BL8G32C16S4B.8FE 8GB
Corsair CML16GX3M2A1600C10 8GB
Essencore Limited KD48GU881-26N190A 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M471A5143EB0-CPB 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 8ATF1G64AZ-2G3A1 8GB
Kingston 9965525-140.A00LF 8GB
Kingston KHX2400C14S4/4G 4GB
Samsung M471B5273DH0-CH9 4GB
A-DATA Technology DDR4 2400 16GB
报告一个错误
×
Bug description
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