Samsung M378B5673EH1-CF8 2GB vs G Skill Intl F4-3600C17-4GVK 4GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

G Skill Intl F4-3600C17-4GVK 4GB

G Skill Intl F4-3600C17-4GVK 4GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 34

左右 18% 更低的延时

G Skill Intl F4-3600C17-4GVK 4GB

需要考虑的原因
G Skill Intl F4-3600C17-4GVK 4GB

报告一个错误

更快的读取速度，GB/s

14.8 12.7

测试中的平均数值
更快的写入速度，GB/s

11.5 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3600C17-4GVK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 34
读取速度，GB/s

12.7 14.8
写入速度，GB/s

7.5 11.5
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1988 2588

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3600C17-4GVK 4GB

G Skill Intl F4-3600C17-4GVK 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingston ACR26D4S9S8MH-8 8GB

Kingston ACR26D4S9S8MH-8 8GB

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Kingston 9965640-001.C00G 16GB

Kingston 9965640-001.C00G 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Corsair CMK8GX4M1Z3200C16 8GB

Corsair CMK8GX4M1Z3200C16 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

G Skill Intl F4-3000C16-16GTZN 16GB

G Skill Intl F4-3000C16-16GTZN 16GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Panram International Corporation D4N2400PS-8G 8GB

Panram International Corporation D4N2400PS-8G 8GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Samsung M471B5773CHS-CF8 2GB

Samsung M471B5773CHS-CF8 2GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Transcend Information TS2GSH64V1B 16GB

Transcend Information TS2GSH64V1B 16GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Corsair CM4B8G2J2133A15S 8GB

Corsair CM4B8G2J2133A15S 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Super Talent F24SB8GH 8GB

Super Talent F24SB8GH 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Crucial Technology CT4G4DFS8213.C8FBR2 4GB

Crucial Technology CT4G4DFS8213.C8FBR2 4GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB