Samsung M378B5673EH1-CF8 2GB vs Kingston 9905624-022.A00G 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Kingston 9905624-022.A00G 8GB

Kingston 9905624-022.A00G 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 87

左右 68% 更低的延时
更快的写入速度，GB/s

7.5 6.9

测试中的平均数值

Kingston 9905624-022.A00G 8GB

需要考虑的原因
Kingston 9905624-022.A00G 8GB

报告一个错误

更快的读取速度，GB/s

14.5 12.7

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Kingston 9905624-022.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 87
读取速度，GB/s

12.7 14.5
写入速度，GB/s

7.5 6.9
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 1583

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SF564128CJ8N6NNSEG 4GB

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G Skill Intl F4-3200C14-32GVK 32GB

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PNY Electronics PNY 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208

Corsair CMSX4GX3M1A1600C9 4GB

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Crucial Technology C 8GB

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Nanya Technology M2Y51264TU88A2B-3C 512MB

Nanya Technology M2Y51264TU88A2B-3C 512MB

Kingston 99U5713-003.A00G 4GB

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Teikon TMA851U6CJR6N-VKSC 4GB

Teikon TMA851U6CJR6N-VKSC 4GB