Samsung M378B5673EH1-CF8 2GB vs Kingston 9905630-066.A00G 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Kingston 9905630-066.A00G 16GB

Kingston 9905630-066.A00G 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 10% 更低的延时

Kingston 9905630-066.A00G 16GB

需要考虑的原因
Kingston 9905630-066.A00G 16GB

报告一个错误

更快的读取速度，GB/s

16.9 12.7

测试中的平均数值
更快的写入速度，GB/s

12.4 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Kingston 9905630-066.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 31
读取速度，GB/s

12.7 16.9
写入速度，GB/s

7.5 12.4
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1988 3152

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905630-066.A00G 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

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Crucial Technology CT8G4DFD824A.C16FHP 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

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SK Hynix HMA82GS6AFR8N-UH 16GB

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Apacer Technology 78.CAGPN.AZ50C 8GB

Apacer Technology 78.CAGPN.AZ50C 8GB

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Qimonda 72T128420EFA3SB2 1GB

GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

G Skill Intl F4-2666C19-32GNT 32GB

G Skill Intl F4-2666C19-32GNT 32GB