Samsung M378B5673EH1-CF8 2GB vs Kingston 9905700-026.A00G 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Kingston 9905700-026.A00G 8GB

Kingston 9905700-026.A00G 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 53

左右 47% 更低的延时

Kingston 9905700-026.A00G 8GB

需要考虑的原因
Kingston 9905700-026.A00G 8GB

报告一个错误

更快的读取速度，GB/s

15.3 12.7

测试中的平均数值
更快的写入速度，GB/s

11.4 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Kingston 9905700-026.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 53
读取速度，GB/s

12.7 15.3
写入速度，GB/s

7.5 11.4
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1988 2703

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited D4U1636144B 16GB

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Crucial Technology BLS8G4D26BFSE.16FD2 8GB

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Crucial Technology BL16G32C16U4W.M8FB1 16GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

Corsair CMT64GX4M8Z3600C16 8GB

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Qimonda 72T128420EFA3SB2 1GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Super Talent STT-WB160CL0901 2GB

Super Talent STT-WB160CL0901 2GB

Crucial Technology BLT8G4D26AFTA.16FBD 8GB

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