Samsung M378B5673EH1-CF8 2GB vs Kingston 9905702-007.A00G 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Kingston 9905702-007.A00G 8GB

Kingston 9905702-007.A00G 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 40

左右 30% 更低的延时
更快的写入速度，GB/s

7.5 7.2

测试中的平均数值

Kingston 9905702-007.A00G 8GB

需要考虑的原因
Kingston 9905702-007.A00G 8GB

报告一个错误

更快的读取速度，GB/s

12.8 12.7

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Kingston 9905702-007.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 40
读取速度，GB/s

12.7 12.8
写入速度，GB/s

7.5 7.2
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1988 1785

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Essencore Limited KD4AGU88C-26N1900 16GB

Essencore Limited KD4AGU88C-26N1900 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Super Talent F26UB16GH 16GB

Super Talent F26UB16GH 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Netac Technology Co Ltd EKBLACK4083016A 8GB

Netac Technology Co Ltd EKBLACK4083016A 8GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Crucial Technology BL8G32C16U4W.8FE 8GB

Crucial Technology BL8G32C16U4W.8FE 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Crucial Technology BL16G26C16S4B.16FD 16GB

Crucial Technology BL16G26C16S4B.16FD 16GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

SK Hynix HMA82GS6CJR8N-XN 16GB

SK Hynix HMA82GS6CJR8N-XN 16GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Panram International Corporation PUD42400C154G2NJW 4GB

Panram International Corporation PUD42400C154G2NJW 4GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Essencore Limited KD48GU880-36A180X 8GB

Essencore Limited KD48GU880-36A180X 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Apacer Technology 78.C2GFL.C720B 8GB

Apacer Technology 78.C2GFL.C720B 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Crucial Technology CT8G4SFRA32A.C4FE 8GB

Crucial Technology CT8G4SFRA32A.C4FE 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Gloway International (HK) STK4U2400D17082C 8GB

Gloway International (HK) STK4U2400D17082C 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Kingston 99U5712-009.A00G 16GB

Kingston 99U5712-009.A00G 16GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB