Samsung M378B5673EH1-CF8 2GB vs Kllisre M378A5143EB2-CRC 4GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Kllisre M378A5143EB2-CRC 4GB

Kllisre M378A5143EB2-CRC 4GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 47

左右 40% 更低的延时
更快的读取速度，GB/s

12.7 11.1

测试中的平均数值

Kllisre M378A5143EB2-CRC 4GB

需要考虑的原因
Kllisre M378A5143EB2-CRC 4GB

报告一个错误

更快的写入速度，GB/s

7.9 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Kllisre M378A5143EB2-CRC 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 47
读取速度，GB/s

12.7 11.1
写入速度，GB/s

7.5 7.9
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 1967

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQKD1A08 1GB

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Corsair CMK16GX4M2K4133C19 8GB

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PNY Electronics PNY 2GB

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Kingston 9905734-061.A00G 32GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Transcend Information JM2666HLG-16GK 8GB

Transcend Information JM2666HLG-16GK 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Corsair CMN32GX4M2Z3600C18 16GB

Corsair CMN32GX4M2Z3600C18 16GB