Samsung M378B5673EH1-CF8 2GB vs Micron Technology 16ATF2G64HZ-2G3E1 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Micron Technology 16ATF2G64HZ-2G3E1 16GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 24% 更低的延时

Micron Technology 16ATF2G64HZ-2G3E1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3E1 16GB

报告一个错误

更快的读取速度，GB/s

14.2 12.7

测试中的平均数值
更快的写入速度，GB/s

10.7 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 37
读取速度，GB/s

12.7 14.2
写入速度，GB/s

7.5 10.7
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 2591

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD64GX4M8X3800C19 8GB

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Samsung M471A1K43DB1-CTD 8GB

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Micron Technology 8ATF51264HZ-2G1B1 4GB

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Apacer Technology 78.CAGN7.4000C 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Micron Technology 8G2666CL19 8GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Micron Technology 36ADS2G72PZ-2G1A1 16GB

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Corsair CM3X8GA2400C11Y2R 8GB

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Transcend Information JM3200HLB-16GK 8GB

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Mushkin 99[2/7/4]199[F/T] 8GB