Samsung M378B5673EH1-CF8 2GB vs Micron Technology 8ATF1G64HZ-2G6E1 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 36

左右 22% 更低的延时

Micron Technology 8ATF1G64HZ-2G6E1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-2G6E1 8GB

报告一个错误

更快的读取速度，GB/s

15 12.7

测试中的平均数值
更快的写入速度，GB/s

11.5 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 36
读取速度，GB/s

12.7 15.0
写入速度，GB/s

7.5 11.5
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1988 2664

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905624-009.A00G 8GB

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Samsung M393A2K43BB1-CPB 16GB

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SK Hynix HMT425S6CFR6A-PB 2GB

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Crucial Technology CT8G4SFS8213.C8FBR1 8GB

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A-DATA Technology VDQVE1B16 2GB

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Smart Modular SH564128FH8N0QHSCG 4GB

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Kingston 9905663-006.A00G 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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G Skill Intl F4-3600C18-16GTRG 16GB

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Crucial Technology CT8G4SFD824A.C16FDD2 8GB

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SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Corsair CMW32GX4M2Z3200C16 16GB

Corsair CMW32GX4M2Z3200C16 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Crucial Technology CT16G4SFD8266 16GB

Crucial Technology CT16G4SFD8266 16GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Crucial Technology CT32G4SFD832A.M16FF 32GB

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Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Crucial Technology CT16G4DFD824A.C16FAD 16GB

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