Samsung M378B5673EH1-CF8 2GB vs OCMEMORY OCM2933CL16-16GBH 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

OCMEMORY OCM2933CL16-16GBH 16GB

OCMEMORY OCM2933CL16-16GBH 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 59

左右 53% 更低的延时

OCMEMORY OCM2933CL16-16GBH 16GB

需要考虑的原因
OCMEMORY OCM2933CL16-16GBH 16GB

报告一个错误

更快的读取速度，GB/s

20.1 12.7

测试中的平均数值
更快的写入速度，GB/s

10.6 7.5

测试中的平均数值
更高的内存带宽，mbps

23400 8500

左右 2.75 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

OCMEMORY OCM2933CL16-16GBH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 59
读取速度，GB/s

12.7 20.1
写入速度，GB/s

7.5 10.6
内存带宽，mbps

8500 23400

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-23400, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

1988 2382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL32G36C16U4BL.M16FB 32GB

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takeMS International AG TMS2GB264D083805EV 2GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Apacer Technology 78.CAGN7.4000C 8GB

Apacer Technology 78.CAGN7.4000C 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Samsung V-GeN D4S8GL32A8TL 8GB