Samsung M378B5673EH1-CF8 2GB vs Patriot Memory (PDP Systems) 2400 C17 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Patriot Memory (PDP Systems) 2400 C17 8GB

Patriot Memory (PDP Systems) 2400 C17 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 73

左右 62% 更低的延时

Patriot Memory (PDP Systems) 2400 C17 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 2400 C17 8GB

报告一个错误

更快的读取速度，GB/s

14.4 12.7

测试中的平均数值
更快的写入速度，GB/s

7.8 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Patriot Memory (PDP Systems) 2400 C17 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 73
读取速度，GB/s

12.7 14.4
写入速度，GB/s

7.5 7.8
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 1842

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Crucial Technology CT16G4SFD8266.16FE1 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 99U5428-040.A00LF 4GB

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Micron Technology 16ATF2G64AZ-2G1A1 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

V-Color Technology Inc. TN48G26S819-SB 8GB

V-Color Technology Inc. TN48G26S819-SB 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Kingston KHX2666C15S4/16G 16GB

Kingston KHX2666C15S4/16G 16GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200

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Kingston 9905403-156.A00LF 2GB

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Kingston 9965662-004.A00G 16GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Corsair CMD64GX4M8B3200C16 8GB