Samsung M378B5673EH1-CF8 2GB vs Wilk Elektronik S.A. IR2400D464L17S/4G 4GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Wilk Elektronik S.A. IR2400D464L17S/4G 4GB

Wilk Elektronik S.A. IR2400D464L17S/4G 4GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

Wilk Elektronik S.A. IR2400D464L17S/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. IR2400D464L17S/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 28

左右 -17% 更低的延时
更快的读取速度，GB/s

14.1 12.7

测试中的平均数值
更快的写入速度，GB/s

11.8 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Wilk Elektronik S.A. IR2400D464L17S/4G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 24
读取速度，GB/s

12.7 14.1
写入速度，GB/s

7.5 11.8
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 2879

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SanMax Technologies Inc. SMD-8G28HP-21P 8GB

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Samsung M378B5673FH0-CH9 2GB

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G Skill Intl F4-3300C16-8GTZKW 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix HMA41GR7AFR4N-UH 8GB