Samsung M378B5773DH0-CH9 2GB vs Roa Logic BV W4U2666CX1-8G 8GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Roa Logic BV W4U2666CX1-8G 8GB

Roa Logic BV W4U2666CX1-8G 8GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

Roa Logic BV W4U2666CX1-8G 8GB

需要考虑的原因
Roa Logic BV W4U2666CX1-8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 39

左右 -39% 更低的延时
更快的读取速度，GB/s

16.5 11.7

测试中的平均数值
更快的写入速度，GB/s

13.7 7.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Roa Logic BV W4U2666CX1-8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 28
读取速度，GB/s

11.7 16.5
写入速度，GB/s

7.2 13.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1749 3217

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Roa Logic BV W4U2666CX1-8G 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Mushkin 99[2/7/4]199[F/T] 8GB

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G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F4-3600C19-16GSXWB 16GB

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Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

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G Skill Intl F4-3200C15-4GRKD 4GB

G Skill Intl F3-1600C11-4GIS 4GB

G Skill Intl F3-1600C11-4GIS 4GB

G Skill Intl F4-3200C14-8GTZSW 8GB

G Skill Intl F4-3200C14-8GTZSW 8GB