Samsung M391B5673EH1-CH9 2GB vs Dust Leopard DDR4-2400 C17 4GB 4GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Dust Leopard DDR4-2400 C17 4GB 4GB

Dust Leopard DDR4-2400 C17 4GB 4GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 81

左右 68% 更低的延时
更快的写入速度，GB/s

9.0 6.4

测试中的平均数值

Dust Leopard DDR4-2400 C17 4GB 4GB

需要考虑的原因
Dust Leopard DDR4-2400 C17 4GB 4GB

报告一个错误

更快的读取速度，GB/s

13.3 12.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Dust Leopard DDR4-2400 C17 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 81
读取速度，GB/s

12.8 13.3
写入速度，GB/s

9.0 6.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 1456

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT16G4DFD8266.M16FE 16GB

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A-DATA Technology ADOVE1A0834E 1GB

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Corsair CMK32GX4M2B3466C16 16GB

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A-DATA Technology DOVF1B163G2G 2GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F4-4000C15-8GTZR 8GB

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Kingston 9965525-018.A00LF 4GB

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Kingston ACR32D4S2S1ME-8 8GB

Kingston ACR32D4S2S1ME-8 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

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G Skill Intl F4-2666C18-32GRS 32GB

Kingston 99P5471-016.A00LF 8GB

Kingston 99P5471-016.A00LF 8GB

Kingston 99U5471-034.A00LF 4GB

Kingston 99U5471-034.A00LF 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

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ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

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SK Hynix HMA851U6CJR6N-UH 4GB

SK Hynix HMA851U6CJR6N-UH 4GB