Samsung M391B5673EH1-CH9 2GB vs Kingmax Semiconductor GZOH23F-18---------- 16GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Kingmax Semiconductor GZOH23F-18---------- 16GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 41

左右 37% 更低的延时
更快的写入速度，GB/s

9.0 7.7

测试中的平均数值

Kingmax Semiconductor GZOH23F-18---------- 16GB

需要考虑的原因
Kingmax Semiconductor GZOH23F-18---------- 16GB

报告一个错误

更快的读取速度，GB/s

14.7 12.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 41
读取速度，GB/s

12.8 14.7
写入速度，GB/s

9.0 7.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 2154

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M391B5673EH1-CH9 2GB

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Kingmax Semiconductor GZOH23F-18---------- 16GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

Kingston 99U5584-004.A00LF 4GB

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Crucial Technology BLS8G4D26BFSC.16FE 8GB

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Dust Leopard DDR4-2400 C17 8GB 8GB

Dust Leopard DDR4-2400 C17 8GB 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

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Crucial Technology CT16G4DFD8213.C16FBD 16GB

SK Hynix HMT125S6TFR8C-G7 2GB

SK Hynix HMT125S6TFR8C-G7 2GB

Samsung M471B5273CH0-YK0 4GB

Samsung M471B5273CH0-YK0 4GB