RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
SK Hynix HMT125S6TFR8C-G7 2GB
Samsung M471B5273CH0-YK0 4GB

SK Hynix HMT125S6TFR8C-G7 2GB vs Samsung M471B5273CH0-YK0 4GB

总分
star star star star star
SK Hynix HMT125S6TFR8C-G7 2GB

SK Hynix HMT125S6TFR8C-G7 2GB

总分
star star star star star
Samsung M471B5273CH0-YK0 4GB

Samsung M471B5273CH0-YK0 4GB

差异 规格 评论

差异

SK Hynix HMT125S6TFR8C-G7 2GB 需要考虑的原因
SK Hynix HMT125S6TFR8C-G7 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 38
    左右 24% 更低的延时
Samsung M471B5273CH0-YK0 4GB 需要考虑的原因
Samsung M471B5273CH0-YK0 4GB
报告一个错误
  • 更快的读取速度，GB/s
    12.6 left arrow 6.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.8 left arrow 3.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 8500
    左右 1.51 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT125S6TFR8C-G7 2GB
Samsung M471B5273CH0-YK0 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    29 left arrow 38
  • 读取速度，GB/s
    6.9 left arrow 12.6
  • 写入速度，GB/s
    3.8 left arrow 8.8
  • 内存带宽，mbps
    8500 left arrow 12800
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    865 left arrow 2174

SK Hynix HMT125S6TFR8C-G7 2GB RAM的比较

Crucial Technology CT4G4DFS824A.C8FF 4GB

Samsung M471B5273CH0-YK0 4GB RAM的比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471B5273CH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMT125S6TFR8C-G7 2GB
SK Hynix HMT125S6TFR8C-G7 2GB
Samsung M471B5273CH0-YK0 4GB
Samsung M471B5273CH0-YK0 4GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
G Skill Intl F4-3466C16-8GTZKW 8GB
G Skill Intl F4-3466C16-8GTZKW 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Chun Well Technology Holding Limited D4U0832160B 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Good Wealth Technology Ltd. KETECH 8GB
Good Wealth Technology Ltd. KETECH 8GB
内存RAM
EVGA 16G-D3-1600-MR 8GB
EVGA 16G-D3-1600-MR 8GB
Apacer Technology 78.BAGNF.40C0B 4GB
Apacer Technology 78.BAGNF.40C0B 4GB
内存RAM
Corsair CML8GX3M1A1600C9 8GB
Corsair CML8GX3M1A1600C9 8GB
EVGA 8GX-D4-2800-MR 8GB
EVGA 8GX-D4-2800-MR 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT16G4SFD832A.C16FP 16GB
Crucial Technology CT16G4SFD832A.C16FP 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMA41GU6AFR8N-TF 8GB
SK Hynix HMA41GU6AFR8N-TF 8GB
内存RAM
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
G Skill Intl F4-3200C16-16GVK 16GB
G Skill Intl F4-3200C16-16GVK 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMK16GX4M1A2666C16 16GB
Corsair CMK16GX4M1A2666C16 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT8G4SFS8266.C8FE 8GB
Crucial Technology CT8G4SFS8266.C8FE 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Samsung M378A2G43AB3-CWE 16GB
Samsung M378A2G43AB3-CWE 16GB
内存RAM