Samsung M391B5673EH1-CH9 2GB vs Samsung M378B2873FHS-CH9 1GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Samsung M378B2873FHS-CH9 1GB

Samsung M378B2873FHS-CH9 1GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

更快的读取速度，GB/s

12.8 12.7

测试中的平均数值
更快的写入速度，GB/s

9.0 7.5

测试中的平均数值

Samsung M378B2873FHS-CH9 1GB

需要考虑的原因
Samsung M378B2873FHS-CH9 1GB

报告一个错误

低于PassMark测试中的延时，ns

22 26

左右 -18% 更低的延时

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Samsung M378B2873FHS-CH9 1GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

26 22
读取速度，GB/s

12.8 12.7
写入速度，GB/s

9.0 7.5
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2143 1175

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Samsung M378B2873FHS-CH9 1GB

Samsung M378B2873FHS-CH9 1GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kllisre D4 8G 8GB

Kllisre D4 8G 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

A-DATA Technology AD4U240038G17-BHYA 8GB

A-DATA Technology AD4U240038G17-BHYA 8GB

PUSKILL PJ8TFK1GM8 8GB

PUSKILL PJ8TFK1GM8 8GB

Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Essencore Limited KD4AGU880-36A180X 16GB

Essencore Limited KD4AGU880-36A180X 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Corsair CMD16GX4M4C3200C16 4GB

Corsair CMD16GX4M4C3200C16 4GB

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

G Skill Intl F4-3866C18-4GVK 4GB

G Skill Intl F4-3866C18-4GVK 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

SK Hynix HMA81GS6CJRJR-VK 8GB

SK Hynix HMA81GS6CJRJR-VK 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-4400C18-8GTZRC 8GB

G Skill Intl F4-4400C18-8GTZRC 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Kingston KHX2933C17S4/16G 16GB

Kingston KHX2933C17S4/16G 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology BLS8G4D240FSC.M16FAD 8GB

Crucial Technology BLS8G4D240FSC.M16FAD 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Corsair CMT32GX4M2Z3600C18 16GB

Corsair CMT32GX4M2Z3600C18 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Kingston 9905664-010.A00G 4GB

Kingston 9905664-010.A00G 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMW128GX4M8C3200C16 16GB

Corsair CMW128GX4M8C3200C16 16GB