Samsung M393B1K70CH0-YH9 8GB vs Kllisre DDR4-8GB 8GB

总分

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

总分

Kllisre DDR4-8GB 8GB

Kllisre DDR4-8GB 8GB

差异规格评论

差异

Samsung M393B1K70CH0-YH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-YH9 8GB

报告一个错误

Kllisre DDR4-8GB 8GB

需要考虑的原因
Kllisre DDR4-8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

46 49

左右 -7% 更低的延时
更快的读取速度，GB/s

11.4 10.1

测试中的平均数值
更快的写入速度，GB/s

8.1 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-YH9 8GB

Kllisre DDR4-8GB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 46
读取速度，GB/s

10.1 11.4
写入速度，GB/s

7.8 8.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2070 2311

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BD1339.M16F 4GB

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Crucial Technology CB16GU2666.C8ET 16GB

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Samsung M395T2863QZ4-CF76 1GB

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Kingston KGTWW1-MIE 4GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Corsair CMK32GX4M1A2400C16 32GB

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Mushkin MRA4S320GJJM32G 32GB

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Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-4000C19-16GTZKK 16GB

G Skill Intl F4-4000C19-16GTZKK 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

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Crucial Technology BLT4G3D1337DT1TX0. 4GB

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G Skill Intl F4-4266C16-8GTZR 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB