Samsung M393B1K70QB0-CK0 8GB vs Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB

Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB

需要考虑的原因
Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 47

左右 -104% 更低的延时
更快的读取速度，GB/s

16.5 10.4

测试中的平均数值
更快的写入速度，GB/s

12.7 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 23
读取速度，GB/s

10.4 16.5
写入速度，GB/s

7.8 12.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2169 2790

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70QB0-CK0 8GB

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Crucial Technology CT32G4DFD8266.C16FE 32GB

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Samsung M378B5273CH0-CH9 4GB

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Aquarius Production Company LLC 16G-D4-2666-MR 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB

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