Samsung M393B5170FH0-CH9 4GB vs Corsair CMSX32GX4M1A2666C18 32GB

总分

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分

Corsair CMSX32GX4M1A2666C18 32GB

Corsair CMSX32GX4M1A2666C18 32GB

差异规格评论

差异

Samsung M393B5170FH0-CH9 4GB

需要考虑的原因
Samsung M393B5170FH0-CH9 4GB

报告一个错误

Corsair CMSX32GX4M1A2666C18 32GB

需要考虑的原因
Corsair CMSX32GX4M1A2666C18 32GB

报告一个错误

低于PassMark测试中的延时，ns

38 49

左右 -29% 更低的延时
更快的读取速度，GB/s

17.4 10

测试中的平均数值
更快的写入速度，GB/s

13.2 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CH9 4GB

Corsair CMSX32GX4M1A2666C18 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 38
读取速度，GB/s

10.0 17.4
写入速度，GB/s

8.2 13.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2116 3183

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-447.A00LF 4GB

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Apacer Technology GD2.1542WS.001 8GB

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G Skill Intl F3-1600C11-8GIS 8GB

G Skill Intl F3-1600C11-8GIS 8GB

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

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Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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A-DATA Technology DDR2 800G 2GB

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Kingston 9905702-007.A00G 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Corsair CMD16GX4M2B3733C17 8GB

Corsair CMD16GX4M2B3733C17 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Samsung M378A1K43DB2-CVF 8GB

Samsung M378A1K43DB2-CVF 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Corsair CM4X4GF2133C13K4 4GB

Corsair CM4X4GF2133C13K4 4GB