Samsung M393B5170FH0-CH9 4GB vs Kingmax Semiconductor GLLF62F-D8---------- 4GB

总分

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分

Kingmax Semiconductor GLLF62F-D8---------- 4GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

差异规格评论

差异

Samsung M393B5170FH0-CH9 4GB

需要考虑的原因
Samsung M393B5170FH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

49 62

左右 21% 更低的延时

Kingmax Semiconductor GLLF62F-D8---------- 4GB

需要考虑的原因
Kingmax Semiconductor GLLF62F-D8---------- 4GB

报告一个错误

更快的读取速度，GB/s

16.2 10

测试中的平均数值
更快的写入速度，GB/s

9.7 8.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CH9 4GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 62
读取速度，GB/s

10.0 16.2
写入速度，GB/s

8.2 9.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2116 1772

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 9ASF1G72PZ-2G9E1 8GB

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Samsung 1600 CL10 Series 8GB

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Corsair CMK8GX4M2B3600C18 4GB

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Crucial Technology BLS8G4D26BFSB.16FBD2 8GB

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SK Hynix MMA82GS6CJR8N-VK 16GB

SK Hynix MMA82GS6CJR8N-VK 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-2800C15-4GTZ 4GB

G Skill Intl F4-2800C15-4GTZ 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMN32GX4M2Z4600C18 16GB

Corsair CMN32GX4M2Z4600C18 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Kingston KWTHG4-MIE 16GB

Kingston KWTHG4-MIE 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Kingston 9965662-018.A00G 32GB

Kingston 9965662-018.A00G 32GB