Samsung M395T2863QZ4-CF76 1GB vs A-DATA Technology AO1P32NCSV1-BEWS 16GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

A-DATA Technology AO1P32NCSV1-BEWS 16GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 15

测试中的平均数值
更快的写入速度，GB/s

2,404.5 12.8

测试中的平均数值

A-DATA Technology AO1P32NCSV1-BEWS 16GB

需要考虑的原因
A-DATA Technology AO1P32NCSV1-BEWS 16GB

报告一个错误

低于PassMark测试中的延时，ns

60 104

左右 -73% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 60
读取速度，GB/s

3,192.0 15.0
写入速度，GB/s

2,404.5 12.8
内存带宽，mbps

6400 25600

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
时序/时钟速度

no data 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

786 2554

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M395T2863QZ4-CF76 1GB

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Corsair CMX8GX3M2A1600C11 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

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Unifosa Corporation HU564404EP0200 4GB

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Kingston KHX2133C11D3/4GX 4GB

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Gold Key Technology Co Ltd NMUD480E85-3200E 8GB

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G Skill Intl F4-3200C14-8GTZKO 8GB

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Kingston ACR256X64D3S1333C9 2GB

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