Samsung M395T2863QZ4-CF76 1GB vs Avant Technology J642GU42J5213NF 16GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Avant Technology J642GU42J5213NF 16GB

Avant Technology J642GU42J5213NF 16GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 14.2

测试中的平均数值
更快的写入速度，GB/s

2,404.5 11.0

测试中的平均数值

Avant Technology J642GU42J5213NF 16GB

需要考虑的原因
Avant Technology J642GU42J5213NF 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 104

左右 -285% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Avant Technology J642GU42J5213NF 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 27
读取速度，GB/s

3,192.0 14.2
写入速度，GB/s

2,404.5 11.0
内存带宽，mbps

6400 17000

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

786 2596

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK8GX4M1A2666C16 8GB

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Corsair CMD128GX4M8A2400C14 16GB

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Kingston 99U5584-005.A00LF 4GB

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Micron Technology 16ATF2G64HZ-2G3A1 16GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

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Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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G Skill Intl F4-3000C15-8GTZB 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Kingston 9965596-031.B00G 8GB

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TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Crucial Technology CT4G4DFS824A.M8FF 4GB

Crucial Technology CT4G4DFS824A.M8FF 4GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M471A1G44BB0-CWE 8GB

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Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Super Talent F24EA8GS 8GB

Super Talent F24EA8GS 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Essencore Limited IM48GU48N24-FFFHM 8GB