Samsung M395T2863QZ4-CF76 1GB vs Corsair CM4B8G2J2133A15S 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Corsair CM4B8G2J2133A15S 8GB

Corsair CM4B8G2J2133A15S 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 15.2

测试中的平均数值
更快的写入速度，GB/s

2,404.5 11.7

测试中的平均数值

Corsair CM4B8G2J2133A15S 8GB

需要考虑的原因
Corsair CM4B8G2J2133A15S 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 104

左右 -316% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Corsair CM4B8G2J2133A15S 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 25
读取速度，GB/s

3,192.0 15.2
写入速度，GB/s

2,404.5 11.7
内存带宽，mbps

6400 17000

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

786 2655

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T2863EHS-CF7 1GB

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AMD AE34G1601U1 4GB

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Kingston 9905403-090.A01LF 4GB

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Panram International Corporation D4N2666PS-16G 16GB

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Micron Technology 8ATF2G64AZ-3G2E1 16GB

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SK Hynix HMT41GS6BFR8A-PB 8GB

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G Skill Intl F4-3600C16-8GTRG 8GB

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

Kingston KDK8NX-MIE 16GB

Kingston KDK8NX-MIE 16GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

G Skill Intl F4-3200C16-8GTZ 8GB

G Skill Intl F4-3200C16-8GTZ 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N