Samsung M395T2863QZ4-CF76 1GB vs Crucial Technology BLE8G4D26AFEA.16FBD 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 16.6

测试中的平均数值
更快的写入速度，GB/s

2,404.5 13.3

测试中的平均数值

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

需要考虑的原因
Crucial Technology BLE8G4D26AFEA.16FBD 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 104

左右 -215% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 33
读取速度，GB/s

3,192.0 16.6
写入速度，GB/s

2,404.5 13.3
内存带宽，mbps

6400 19200

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

786 3141

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Team Group Inc. UD5-6400 16GB

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Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

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A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

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SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Crucial Technology BLS16G4D30CEST.16FD 16GB

Crucial Technology BLS16G4D30CEST.16FD 16GB

G Skill Intl F5-5600J4040C16G 16GB

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Kingston KHYXPX-HYJ 8GB

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Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Corsair CM4X8GE2133C13K4 8GB

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Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB