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Samsung M395T2863QZ4-CF76 1GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Samsung M395T2863QZ4-CF76 1GB vs Gloway International Co. Ltd. TYP4U3200E16082C 8GB

总分
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Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分
star star star star star
Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

差异 规格 评论

差异

Samsung M395T2863QZ4-CF76 1GB 需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,404.5 left arrow 10.6
    测试中的平均数值
Gloway International Co. Ltd. TYP4U3200E16082C 8GB 需要考虑的原因
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 104
    左右 -167% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    104 left arrow 39
  • 读取速度，GB/s
    3,192.0 left arrow 17.5
  • 写入速度，GB/s
    2,404.5 left arrow 10.6
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    no data left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    786 left arrow 2600

Samsung M395T2863QZ4-CF76 1GB RAM的比较

takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
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G Skill Intl F4-3000C14-8GTZ 8GB
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Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Samsung M378A1K43BB2-CTD 8GB
Samsung M378A1K43BB2-CTD 8GB
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Micron Technology 16ATF1G64HZ-2G1A2 8GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
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Micron Technology 16ATF4G64HZ-3G2E2 32GB
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Patriot Memory (PDP Systems) PSD22G8002 2GB
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Kllisre 8ATF1G64AZ-2G6H1 8GB
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Kingston KVR16N11/8-SP 8GB
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Gold Key Technology Co Ltd NMUD480E86-3200 8GB
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Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
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Team Group Inc. TEAMGROUP-SD4-2400 16GB
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Kingston KVR16N11/8-SP 8GB
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Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
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AMD R5316G1609U2K 8GB
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OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
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Kingston 99U5403-492.A00LF 8GB
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ATP Electronics Inc. A4G08QA8BNPBSE 8GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Crucial Technology BL16G32C16U4W.16FE 16GB
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Kingston KHX1600C9D3/8G 8GB
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Heoriady HX2666CX15D4/4G 4GB
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Kingston KVR800D2N6/2G 2GB
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Kingston XRMWRN-MIE2 16GB
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Kingston KP4T2F-PSB 4GB
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Crucial Technology BLT4G4D30AETA.K8FE 4GB
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